Philips Semiconductors. Product specification. N-channel silicon field-effect transistors. BFA; BFB; BFC. FEATURES. • Interchangeability of drain and. BF(1). BFA, BFA(2). BFB, BFB. BFC. VGS. .. “Typical” parameters which may be provided in SCILLC data sheets and/or. BFC datasheet, BFC pdf, BFC data sheet, datasheet, data sheet, pdf, Fairchild Semiconductor, N-Channel RF Amplifier.
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Rated with a minimum output power of 30W, it More information. No offer to sell or license Nothing in this document may be interpreted or construed as an offer to sell datazheet that is open for acceptance or the grant, conveyance or implication of any license under any copyrights, patents or other industrial or intellectual property rights.
Applications Applications that are described herein for any of these products are for illustrative purposes only. The LNA has a high input and More information. UNIT envelope suitable for surface mounting.
UNIT thyristors in a plastic envelope. Lizbeth Taylor dattasheet years ago Views: Features 1 Low drain-source on-resistance: All leads are isolated More information. However, NXP Semiconductors does not give any representations or warranties, expressed or implied, as to the accuracy or completeness of such information and shall have no liability for the consequences of use of such information.
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Precision ma regulators. This enables the use of current limiting resistors to interface inputs to voltages More information. In case an individual agreement is concluded only the terms and conditions of the respective agreement shall apply.
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No changes were made to the technical content, except for package outline drawings which were updated to the latest version. Product overview Type number Package Configuration More information.
Drain current as a function of junction temperature; typical values for BF5C. Input capacitance as low as 15pF.
BFC MOSFET Datasheet pdf – Equivalent. Cross Reference Search
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BFC Datasheet pdf – N-Channel RF Amplifier – Fairchild Semiconductor
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Three terminal adjustable current sources Features Operates from 1V to 40V 0. To make this website work, we log user data and share it with processors. They are specified in compliance with More information. They are specified in compliance with.
Gate leakage current as a function of junction temperature; Fig.
It is neither qualified nor tested in accordance with automotive testing or application requirements. Limiting values Stress above one or more limiting values as defined in the Absolute Maximum Ratings System of IEC 6 will cause permanent damage to the device.
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